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B+, P+, AS+ and Si+ Ion Implantation Induced Defects in Silicon Studied by a Variable-Energy Positron Beam

Published online by Cambridge University Press:  26 February 2011

Jun Sugiura ,
Makoto Ogasavara ,
Akira Uedono ,
Long Vei  and
Shoichiro Tanigava
Jun Sugiura
Affiliation:
Hitachi Ltd., Device DevelopMent Center, Tokyo 198, Japan
Makoto Ogasavara
Affiliation:
Hitachi Ltd., Device DevelopMent Center, Tokyo 198, Japan
Akira Uedono
Affiliation:
University of Tokyo, dept. of Industrial Chemistry, Tokyo 113, Japan
Long Vei
Affiliation:
University of Tsukuba, Institute of Materials Science, Ibaraki 305, Japan
Shoichiro Tanigava
Affiliation:
University of Tsukuba, Institute of Materials Science, Ibaraki 305, Japan
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Abstract

Vacancy type defects introduced by As+, P+, Si+ and B+ ion implantations into Si (100) single crystals were studied by a variable-energy positron beam. Depth distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that this technique is sensitive not only to a vacancy type defect but to formation of amorphous regions. The defects introduced by lower doses were identified as vacancy clusters from isochronal annealing experiments. By higher doses such as 5×1014 /cm2, amorphous layers were formed for 150KeV As+, 150KeV P+, and 200KeV Si+ ions, and it was not formed for 80KeV B+ by the dose of 5×1015 /cm2. These results are consistent with the calculated critical doses. In the case of B+, pre-amorphous formation was observed with higher ion beam current over 5mA and a dose of 5×1015 /cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1055
Copyright
Copyright © Materials Research Society 1992

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References

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