Hostname: page-component-f554764f5-rvxtl Total loading time: 0 Render date: 2025-04-10T08:04:36.675Z Has data issue: false hasContentIssue false
  • English
  • Français

Avoiding Dislocation Formation for B, P, and As Implants in Silicon

Published online by Cambridge University Press:  28 February 2011

J. R. Liefting ,
V. Raineri ,
R. J. Schreutelkamp ,
J. S. Custer  and
F. W. Saris
J. R. Liefting
Affiliation:
Technical University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
V. Raineri
Affiliation:
University of Catania, Dipartimento di Fisica, Corso Italia 57, 1–95129 Catania, Italy
R. J. Schreutelkamp
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
J. S. Custer
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Get access

Abstract

Implants of B, P, and As in Si lead to dislocation formation after 900°c annealing if a critical amount of implant damage is exceeded. However, it is possible to implant higher doses without forming dislocations if the dose is implanted in several sub-critical steps. Annealing between each step removes the (sub-critical) implant damage and dislocations do not form. Such avoidance of dislocation formation is demonstrated for 80 keV implants of B and MeV implants of B, P, and As.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 173
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Schreutelkamp, R.J., Custer, J.S., Liefting, J.R., Lu, W.X., and Saris, F.W., Mater. Sci. Rept. 6 (1991) 275.Google Scholar
[2] Tsukamoto, K., Komori, S., Kuroi, T., and Akasaka, Y., Nucl. Instr. and Meth. B59/60, 584 (1991).CrossRefGoogle Scholar
[3] Tamura, M., Ando, T., and Ohyu, K., Nucl. Instr. and Meth. B59/60, 572 (1991).Google Scholar
[4] Liefting, J.R., Custer, J.S., Schreutelkamp, R.J., and Saris, F.W., in: Proceedings International School of Materials Science and Technology, Erice (1991).Google Scholar
[5] Schreutelkamp, R.J., Custer, J.S., Liefting, J.R., and Saris, F.W., Appl. Phys. Lett. 58, 2827 (1991).Google Scholar
[6] Chu, W.-K., Mayer, J.W., and Nicolet, M.-A., Backscattering Spectrometry, Academic Press, New York (1978).Google Scholar
[7] Corbett, J.W., Karins, J.P., and Tan, T.Y., Nucl. Instr. and Meth. B182/183, 457 (1981).Google Scholar
[8] Biersack, J.P., and Haggmark, L.G., Nucl. Instr. and Meth. 174, 257 (1980).Google Scholar