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Avoiding Dislocation Formation for B, P, and As Implants in Silicon

Published online by Cambridge University Press:  28 February 2011

J. R. Liefting ,
V. Raineri ,
R. J. Schreutelkamp ,
J. S. Custer  and
F. W. Saris
J. R. Liefting
Affiliation:
Technical University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
V. Raineri
Affiliation:
University of Catania, Dipartimento di Fisica, Corso Italia 57, 1–95129 Catania, Italy
R. J. Schreutelkamp
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
J. S. Custer
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Implants of B, P, and As in Si lead to dislocation formation after 900°c annealing if a critical amount of implant damage is exceeded. However, it is possible to implant higher doses without forming dislocations if the dose is implanted in several sub-critical steps. Annealing between each step removes the (sub-critical) implant damage and dislocations do not form. Such avoidance of dislocation formation is demonstrated for 80 keV implants of B and MeV implants of B, P, and As.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 173
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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