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Automatic Reaction Modeling in Chemical Vapor Depositions Using Multiple Process Simulators

Published online by Cambridge University Press:  01 February 2011

Takahiro Takahashi ,
Kimito Funatsu  and
Yoshinori Ema
Takahiro Takahashi
Affiliation:
Department of Knowledge-based Information Engineering, Faculty of Engineering, Toyohashi University of Technology, Hibarigaoka, Tempaku, Toyohashi, Aichi 441–8580, JAPAN
Kimito Funatsu
Affiliation:
Department of Knowledge-based Information Engineering, Faculty of Engineering, Toyohashi University of Technology, Hibarigaoka, Tempaku, Toyohashi, Aichi 441–8580, JAPAN
Yoshinori Ema
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, 3–5–1 Jouhoku, Hamamatsu, Shizuoka 432–8561, JAPAN
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Abstract

The identification of appropriate reaction models is very helpful for developing chemical vapor deposition (CVD) processes. In this paper we propose a novel system to analyze experimental data of various CVD reactors and identify reaction models automatically using Genetic Algorithms (GA) with multiple process simulators and modeled functions. We demonstrate that this system is able to adequately model reaction systems, and that complex analysis of various experimental data increased the reliability of the reaction modeling results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 804: Symposium JJ – Combinatorial and Artificial Intelligence Methods in Materials Science II , 2003 , JJ9.15
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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