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Auger Ionization of Silicon Nanocrystals
Published online by Cambridge University Press: 15 February 2011
Abstract
Photoluminescence saturation under intense CW optical excitation and optical degradation of photoluminescence from porous Si are studied. The anisotropy of the luminescence is observed under intense linearly polarized illumination at room temperature and after polarized light induced degradation at low temperature. The Auger process is shown to be responsible for these observations.
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- Copyright © Materials Research Society 1997
References
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