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Au-Ge-Ni-Ti Ohmic Contacts on Gallium Arsenide

Published online by Cambridge University Press:  25 February 2011

K. B. Alexander  and
W. M. Stobbs
K. B. Alexander
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6376
W. M. Stobbs
Affiliation:
Department of Materials Science and Metallurgy, Cambridge University, Cambridge, England CB2 3QZ
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Abstract

The influence of titanium additions on the microstructure of Au-Ge-Ni ohmic contacts on gallium arsenide has been evaluated. Sequentially deposited layers of Ge, Au and Ni were topped with a titanium layer. The titanium formed a native titanium oxide on the upper surface of the contact which helped to maintain a continuous film during the anneal. Both the as-deposited and the annealed microstructures were studied with the use of electron microscopy techniques. In order to examine thoroughly the various phases which form in the annealed contact, unique specimen preparation procedures were used to fabricate a single plan-view specimen in which it was possible to examine the microstructure at various depths.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 363
Copyright
Copyright © Materials Research Society 1990

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References

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