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Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET

Published online by Cambridge University Press:  01 February 2011

Gabriel Lansbergen ,
Rajib Rahman ,
Cameron Wellard ,
Jaap Caro ,
Nadine Collaert ,
Serge Biesemans ,
Gerhard Klimeck ,
Lloyd Hollenberg  and
Sven Rogge
Gabriel Lansbergen
Affiliation:
[email protected], TU Delft, Kavli institute of nanoscience, Brasserskade 18, Delft, 2612 CE, Netherlands, 0031614191565
Rajib Rahman
Affiliation:
[email protected], Purdue University, Network for Computational Nanotechnology, West Lafayette, IN, 47907, United States
Cameron Wellard
Affiliation:
[email protected], University of Melbourne, Center for Quantum Computer Technology, Melbourne, VIC 3010, Australia
Jaap Caro
Affiliation:
[email protected], TU Delft, Kavli institute of nanoscience, Delft, 2628 CJ, Netherlands
Nadine Collaert
Affiliation:
[email protected], IMEC, Leuven, 3001, Belgium
Serge Biesemans
Affiliation:
[email protected], IMEC, Leuven, 3001, Belgium
Gerhard Klimeck
Affiliation:
[email protected], Purdue University, Network for Computational Nanotechnology, West Lafayette, IN, 47907, United States
Lloyd Hollenberg
Affiliation:
[email protected], University of Melbourne, Center for Quantum Computer Technology, Melbourne, VIC 3010, Australia
Sven Rogge
Affiliation:
[email protected], TU Delft, Kavli institute of nanoscience, Delft, 2628 CJ, Netherlands
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Abstract

Current semiconductor devices have been scaled to such dimensions that we need take an atomistic approach to understand their characteristics. The atomistic nature of these devices provides us with a tool to study the physics of very small ensembles of dopants right up to the limit of a single atom. Control and understanding of a dopants wavefunction and its coupling to the environment in a nanostructure could proof a key ingredient for device technology beyond-CMOS. Here, we will discuss the eigenlevels and transport characteristics a single gated As donor. The donor is incorporated in the channel of wrap-around gate transistors (FinFETs). The measured level spectrum is shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The level spectrum of this system can be well described by a NEMO-3D model, which is based on a numerical tight-binding approximation.

Keywords

dopantelectrical propertiesSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1067: Symposium B – Materials and Devices for “Beyond CMOS” Scaling , 2008 , 1067-B03-07
Copyright
Copyright © Materials Research Society 2008

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References

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