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Atomistic Study of Strain Profiles in Semiconductor Quantum Dot Structures

Published online by Cambridge University Press:  17 March 2011

K. Shintani ,
H. Sugii ,
Y. Kikuchi  and
M. Kobayashi
K. Shintani
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan, [email protected]
H. Sugii
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
Y. Kikuchi
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
M. Kobayashi
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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Abstract

The minimum energy atomic configurations of stacked GaAs/InAs/GaAs quantum dot structures are calculated by using the conjugate gradient energy minimization with the Stillinger-Weber potentials. The islands are assumed to be either of pyramidal shape or of trapezoidal shape. The numerical results for the five-layer stacked structures show that the normal strains exhibit stepwise up-and-down profiles through the vertical centerlines of the islands and intermediate layers. Next, the molecular dynamics method with the Tersoff potential is applied to single Ge/Si and Si/Ge/Si structures with pyramidal islands in order to investigate the effect of temperature. It is found that there is a considerable difference between the normal strain in the direction perpendicular to the island base obtained by the conjugate gradient minimization with the Stillinger-Weber potential and that obtained by the molecular dynamics method at 800 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 642: Symposium J – Semiconductor Quantum Dots II , 2000 , J3.2.1
Copyright
Copyright © Materials Research Society 2001

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References

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