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Atomistic Simulations of Dislocation-Interface Interactions in Thin Films

Published online by Cambridge University Press:  15 March 2011

R. W. Leger
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A.
Y.-L. Shen
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A.
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Abstract

Atomistic simulations are carried out to study the effect of atomic sliding capability at the interface between a plastically deforming film and a stiff substrate. Molecular statics modeling is utilized to corroborate the overall film response and the nano-scale defect mechanisms. A free-sliding interface is shown to be able to cause “reflection” of oncoming dislocations and enhance film plasticity. A rigidly bonded interface, on the other hand, is seen to resist approaching dislocations. Partial sliding results in a transitional behavior between the two extremes, as revealed in our parametric analysis. The sliding capability of interface atoms is also seen to dictate the overall film response.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

1. Shen, Y.-L., J. Mater. Res. 18, 2281 (2003).Google Scholar
2. Ege, E. S. and Shen, Y.-L., in Thin Films – Stresses and Mechanical Properties X, Mater. Res. Soc. Symp. Proceedings, Vol. 795, U8.8 (2004).Google Scholar
3. Shen, Y.-L., J. Mater. Res. 19, 973 (2004).Google Scholar
4. Phillips, R., Crystals, Defects and Microstructures – Modeling Across Scales, Cambridge University Press, 2001, p. 206.Google Scholar
5. Freund, L. B. and Suresh, S., Thin Film Materials, Cambridge University Press, 2004, p.534.Google Scholar