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Atomistic Modeling of the Ion Implantation Step Within a 2D Process Simulator

Published online by Cambridge University Press:  10 February 2011

Bruno Schmidt ,
Matthias Posselt ,
Norbert Strecker  and
Thomas Feudel
Bruno Schmidt
Affiliation:
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box, 510 119, D-01314 Dresden, Germany
Matthias Posselt
Affiliation:
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box, 510 119, D-01314 Dresden, Germany
Norbert Strecker
Affiliation:
Swiss Federal Institute of Technology, Integrated Systems Laboratory, Gloriastr. 35, CH-8092, Zürich, Switzerland
Thomas Feudel
Affiliation:
ISE Integrated Systems Engineering AG, Technopark Zürich, Technoparkstr. 1, CH-8005, Zürich, Switzerland
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Abstract

2D calculations of as-implanted dopant profiles are performed using a new module of the process simulator DIOS which is based on the binary collision code Crystal-TRIM. Examples derived from MOS and trench technology are considered. Good lateral and depth resolution is achieved within an acceptable computing time by combining a trajectory splitting algorithm with a method for the lateral duplication of ion trajectories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 21
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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