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Atomic-Scale Analysis of the Reactivity of Radicals from Silane/Hydrogen Plasmas with Silicon Surfaces

Published online by Cambridge University Press:  10 February 2011

Shyam Ramalingam ,
Dimitrios Maroudas  and
Eray S. Aydil
Shyam Ramalingam
Affiliation:
Department of Chemical Engineering, University of California, Santa Barbara, CA 93106–5080
Dimitrios Maroudas
Affiliation:
Department of Chemical Engineering, University of California, Santa Barbara, CA 93106–5080
Eray S. Aydil
Affiliation:
Department of Chemical Engineering, University of California, Santa Barbara, CA 93106–5080
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Abstract

A systematic atomic-scale analysis is presented of the interactions of chemically reactive radicals originating in silane/hydrogen discharges with surfaces of hydrogenated amorphous silicon (a-Si:H) films. The hydrogen concentration on the surface is identified as the major factor that controls both the reactivity of the radicals and the surface reaction mechanism; other important factors include the location of impingement of the radical on the surface and the molecular orientation of the radical with respect to the surface. SiH is found to react with a-Si:H surfaces independent of location of impingement and radical orientation; the reaction mechanism, however, depends strongly on the hydrogen coverage of the surface and impingement location. Our results are in excellent agreement with experimental data for the reaction probability of SiH with a-Si:H film surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 107
Copyright
Copyright © Materials Research Society 1998

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