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Atomic Structures of Silicon Surfaces and Silicon-Silicide Interfaces

Published online by Cambridge University Press:  25 February 2011

H. M. Liu  and
T. T. Tsong
H. M. Liu
Affiliation:
Physics Department, The Pennsylvania State University University Park, Pennsylvania 16802
T. T. Tsong
Affiliation:
Physics Department, The Pennsylvania State University University Park, Pennsylvania 16802
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Abstract

Atomically resolved and well ordered field ion images of silicon surfaces have been obtained for the first time when a carefully cleaned Si tip is annealed to 700 to 800°C for several minutes. Well ordered atomic structures develop on high index planes such as the (130), (135), (124), (234), (123), (113), (115) and (320). Some of them develop the (1×1) structure while others are reconstructed. Two structures coexist for the (130) plane. Twodimensional defects can be seen and their density is surprisingly high. We have also studied formation of thin layers of silicide on silicon surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 157
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. See for example, Smith, D. J. in Chemistry and Physics of Solid Surfaces VI, Springer Series in Surface Sci. 5, 413 (1986).Google Scholar
2. Binnig, G., Rohrer, H., Gerber, Ch. and Weibel, E., Phys. Rev. Lett. 50, 120 (1983).Google Scholar
3. Muller, E. W. and Tsong, T. T., Field Ion Microscopy, Principles and Applications, Elsevier, New York (1969); Progr. Surface Sci. 4, 1 (1973).Google Scholar
4. Liu, H. F., Liu, H. M. and Tsong, T. T., Phys. Rev. Lett. 56, 65 (1986).CrossRefGoogle Scholar
5. Liu, H. M., Liu, H. F. and Tsong, T. T., Surface Sci. 179, L71 (1987). In this paper, the (013) planes are erroneously identified as the (012) planes. This error is corrected here.Google Scholar