Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:38:03.319Z Has data issue: false hasContentIssue false

Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems

Published online by Cambridge University Press:  10 February 2011

S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
H. Amano
Affiliation:
Meijo University, Tempakuku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Meijo University, Tempakuku-ku, Nagoya 468, Japan
M. Koike
Affiliation:
Toyoda Gosei Co LTD, New Market Technical Division, Haruhi-cho Nishikasugai-gun, Aichi 452, Japan
Get access

Abstract

High resolution electron microscopy (HREM) was applied to study atomic structure of stacking faults, grain boundaries and interfaces in III-nitrides epitaxial layers grown by MOVPE on sapphire. Defects formed in GaN epitaxial layers grown by MOVPE were reviewed in comparison with those in MBE grown materials

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Amano, H., Kito, M., Hiramatsu, X., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989)Google Scholar
2. Nakamura, S., Mukai, T., and Senoh, M., Jpn. J. Appl. Phys. 30, L1998 (1991)Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., et al, Appl. Phys. 69, 4056 (1996)Google Scholar
4. Ponce, F.A., Bour, D.P., Nature 386, 351 (1997)Google Scholar
5. Mohammad, S.N., Salvador, A., and Morkoç, H., Proc. IEEE 83, 1306 (1995)Google Scholar
6. Ponce, F.A., MRS Bulletin 22, 51 (1997)Google Scholar
7. Qian, W., Rohrer, G.S., Skowronski, M., Doverspike, K., Rowland, L.B., and Gaskill, D.K., Appl. Phys. Lett. 67, 2284 (1995)Google Scholar
8. Liliental-Weber, Z., Sohn, H., Newman, N., and Washburn, J., J. Vac. Sci. Technol B 13, 1578 (1995)Google Scholar
9. Qian, W., Skowronski, M., and Rohrer, G.S., Mat. Res. Soc. Symp. Proc. 423, 475 (1996)Google Scholar
10. Romano, L.T., Krusor, B.S., Molnar, R.J., Appl. Phys. Lett. 71, 2283 (1997)Google Scholar
11. Wu, X.H., Brown, L.M., Kapolnek, D., Keller, S., et al, J. Appl. Phys. 80, 3228 (1996)Google Scholar
12. Ruvimov, S., Liliental-Weber, Z., Suski, T., Ager, J.W., Washburn, J., Krueger, J., Kisielowski, C., Weber, E.R., Amano, H., and Akasaki, I., Appl. Phys. Lett. 69, 1454 (1996)Google Scholar
13. Liliental-Weber, Z., Ruvimov, S., Suski, T., Ager, J.W. III, Swider, W., Washburn, J., Amano, H., Akasaki, I., Imler, W., Mat. Res. Soc. Symp. Proc. 423, 487 (1996)Google Scholar
14. Liliental-Weber, Z., Kisielowski, C., Ruvimov, S., Chen, Y., and Washburn, J., J. Electron. Mat. 25, 1545 (1996)Google Scholar
15. Liliental-Weber, Z., Ruvimov, S., Kisielowski, C., Chen, Y., Swider, W., Washburn, J., Newmann, N., Gassmann, A., Liu, X., Schloss, L., Weber, E.R., Grzegory, I., Bockowski, M., Jun, J., Suski, T., Pakula, K., Baranowski, J., Porowski, S., Amano, H., and Akasaki, I., MRS Proc. 395, 351 (1996)Google Scholar
16. Ponce, F.A., Cherns, D., Young, W.T., Steeds, J.W., Appl.Phys. Lett. 69, 770 (1996)Google Scholar
17. Hull, D. and Bacon, D.J., Introduction to Dislocations, Pegamon Press, 1984 Google Scholar
18. Ponce, F.A., Bour, D.P., Gotz, W., and Wright, P.J., Appl. Phys. Lett. 68, 57, (1996)Google Scholar
19. Ponce, F.A., Steeds, J.W., Dyer, C.D., Pitt, G.D., Appl. Phys.Lett. 69, 2650 (1996)Google Scholar
20. Akasaki, I., et al. J. Crystal Growth 98, 209 (1989)Google Scholar
21. Liliental-Weber, Z., Ruvimov, S., Chen, Y., Swider, W. and Washburn, J., MRS Proc. 449, 417 (1997)Google Scholar
22. Liliental-Weber, Z., Chen, Y., Ruvimov, S., and Washburn, J., Phys. Rev. Lett. 79, 2835 (1997)Google Scholar
23. Cherns, D., Young, W.T., Steeds, J.W., Ponce, F.A., et al J. Cryst. Growth 178, 201 (1997)Google Scholar
24. Ruvimov, S., Liliental-Weber, Z., Washburn, J., et.al. Mater. Res. Soc. Symp. Proc. 468, (1997)Google Scholar
25. Srikant, V., Speck, J.S., Clarke, D.R., J. Appl. Phys. 82, 4286 (1997)Google Scholar
26. Ponce, F.A., Van De Walle, C.G., Northrup, J.E., Phys. Rev. B 53, 7473 (1996)Google Scholar
27. Heying, B., Wu, X.H., Keller, A.S., Li, Y., et al, Appl. Phys. Lett. 68, 643 (1996)Google Scholar
28. Singh, R., Doppalapudi, D., Moustakas, T.D., Romano, L.T., Appl. Phys. Lett. 70, 1089 (1997)Google Scholar
29. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, S., Fujita, S., Nakamura, S., Appl. Phys. Lett. 70, 981 (1997)Google Scholar