Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Wetzel, Christian
Nitta, Shugo
Takeuchi, Tetsuya
Yamaguchi, Shigeo
Amano, H.
and
Akasaki, I.
1998.
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 3,
Issue. ,
Chisholm, J. A.
and
Bristowe, P. D.
1999.
Simulations of Defect-Interface Interactions in GaN.
MRS Proceedings,
Vol. 595,
Issue. ,
Chisholm, J. A.
and
Bristowe, P. D.
2000.
Simulations of Defect-Interface Interactions in GaN.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 5,
Issue. S1,
p.
287.
Heinke, H
Kirchner, V
Selke, H
Chierchia, R
Ebel, R
Einfeldt, S
and
Hommel, D
2001.
X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence.
Journal of Physics D: Applied Physics,
Vol. 34,
Issue. 10A,
p.
A25.
Liliental-Weber, Z
Jasinski, J
and
Washburn, J
2002.
Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods.
Journal of Crystal Growth,
Vol. 246,
Issue. 3-4,
p.
259.
Tsui, H. C. L.
Goff, L. E.
Barradas, N. P.
Alves, E.
Pereira, S.
Beere, H. E.
Farrer, I.
Nicoll, C. A.
Ritchie, D. A.
and
Moram, M. A.
2015.
The effect of metal‐rich growth conditions on the microstructure of ScxGa1−xN films grown using molecular beam epitaxy.
physica status solidi (a),
Vol. 212,
Issue. 12,
p.
2837.