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Atomic Scale Study of Cosi/Si (111) and CoSi2/Si (111) Interfaces

Published online by Cambridge University Press:  25 February 2011

A. Catana ,
M. Heintze ,
P.E. Schmid  and
P. Stadelmann
A. Catana
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
M. Heintze
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
P.E. Schmid
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
P. Stadelmann
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
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Abstract

High Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 147
Copyright
Copyright © Materials Research Society 1990

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References

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