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Atomic Scale Study of Cosi/Si (111) and CoSi2/Si (111) Interfaces

Published online by Cambridge University Press:  25 February 2011

A. Catana ,
M. Heintze ,
P.E. Schmid  and
P. Stadelmann
A. Catana
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
M. Heintze
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
P.E. Schmid
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
P. Stadelmann
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
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Abstract

High Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 147
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Tung, R.T., Levi, A.F.J. and Gibson, J.M. Appl. Phys. Lett. 48, 635 (1986)Google Scholar
2. Phillips, J.M., Batstone, J.L., Hensel, J.C., Cerullo, M. and Unterwald, F.C. J. Mater. Res. 4, 145 (1989)Google Scholar
3. d'Anterroches, C. Surf. Sci. 168, 751 (1986)Google Scholar
4. Gibson, J.M., Batstone, J.L. and Tung, R.T. Appl. Phys. Lett. 51, 45 (1987)Google Scholar
5. Appelbaum, A., Knoell, R.V. and Murarka, S.P. J. Appl. Phys. 57, 1880 (1985)Google Scholar
6. Stadelmann, P., Ultramicroscopy 21, 131 (1987)Google Scholar
7. Catana, A., Schmid, P.E., Rieubland, S., Levy, F. and Stadelmann, P. J. Phys. Condens. Matter 1, 3999 (1989)Google Scholar
8. Cherns, D., Anstis, G.R. and Hutchison, J.L. Phil. Mag. 46A, 849 (1982)Google Scholar
9. Hamann, D.R. Phys. Rev. Lett. 60, 313 (1988)Google Scholar
10. Gibson, J.M., Bean, J.C., Poate, J.M. and Tung, R.T. Appl. Phys. Lett. 41, 818 (1982)Google Scholar
11. Rossi, G., Jiu, X., Santaniello, A., DePadova, P. and Chandesris, D. Phys. Rev. Lett. 62, 191 (1989)Google Scholar
12. Fisher, A.E.M.J., Gustafsson, T. and Veen, J.F. Van der Phys. Rev. B37, 6305 (1988)Google Scholar
13. Bulle-Lieuwma, C.W.T., Jong, A.F. de, Ommen, A.H. van, Veen, J.F. van der and Vrijmoeth, J. to be published in Appl. Phys. Lett.Google Scholar