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The atomic scale removal mechanism during chemomechanical polishing of Silicon: An atomic force microscopy study
Published online by Cambridge University Press: 01 February 2011
Abstract
The pressure dependence of the microwear of an oxidized Si surface under aqueous electrolyte solutions has been investigated using an atomic force microscope with a single crystal Si tip. The removal ratio of Si tip to SiO2 surface is found to be highly sensitive to the contact pressure. We present a microscopic removal mechanism which is determined by an interplay of the diffusion of H2O in Si and SiO2.
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- Copyright © Materials Research Society 2005
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