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The atomic scale removal mechanism during chemomechanical polishing of Silicon: An atomic force microscopy study

Published online by Cambridge University Press:  01 February 2011

Futoshi Katsuki  and
Junji Watanabe
Futoshi Katsuki
Affiliation:
Corporate Research and Development Laboratories, Sumitomo Metal Industries Limited, 1–8 Fuso-cho, Amagasaki 660–0891, Japan
Junji Watanabe
Affiliation:
Department of Mechanical Engineering and Materials Science, Kumamoto University, 2–39–1 Kurokami, Kumamoto 860–8555, Japan
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Abstract

The pressure dependence of the microwear of an oxidized Si surface under aqueous electrolyte solutions has been investigated using an atomic force microscope with a single crystal Si tip. The removal ratio of Si tip to SiO2 surface is found to be highly sensitive to the contact pressure. We present a microscopic removal mechanism which is determined by an interplay of the diffusion of H2O in Si and SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 841: Symposium R – Fundamentals of Nanoindentation and Nanotribology III , 2004 , R9.13
Copyright
Copyright © Materials Research Society 2005

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References

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