Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T04:20:53.750Z Has data issue: false hasContentIssue false

Atomic Scale Properties of Normal and Inverted MBE-Grown Interfaces as Revealed by Zeeman Studies

Published online by Cambridge University Press:  22 February 2011

W. Grieshaber
Affiliation:
Laboratoire de Spectrométrie Physique, B.P. 87, 38402 St. Martin d'Hères Cedex, France
C. Bodin
Affiliation:
Laboratoire de Spectrométrie Physique, B.P. 87, 38402 St. Martin d'Hères Cedex, France
J. Cibert
Affiliation:
Laboratoire de Spectrométrie Physique, B.P. 87, 38402 St. Martin d'Hères Cedex, France
A. Wasiela
Affiliation:
Laboratoire de Spectrométrie Physique, B.P. 87, 38402 St. Martin d'Hères Cedex, France
Y. Merle-D'Aubigne
Affiliation:
Laboratoire de Spectrométrie Physique, B.P. 87, 38402 St. Martin d'Hères Cedex, France
J. Gaj
Affiliation:
Institute of Experimental Physics Warshaw University, 69 Hoza, 00-681 Warszawa, Poland
G. Feuillet
Affiliation:
DRFMC-SP2M-PSC, CEN Grenoble, 17 av. des Martyrs, 38054 Grenoble Cedex, France
Get access

Abstract

The enhanced Zeeman effect of excitons in asymmetric CdZnTe-CdTe-CdMnTe quantum wells is studied quantitatively to gain information separately on the profile of the normal and inverted interfaces. The normal interface appears as more “abrupt” than the inverted interface. This behaviour is well accounted for if we assume that during the growth a rapid Cd/Mn exchange takes place between the surface layer and the subsurface one.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1A review paper is: Furdyna, J.K., J. Appl. Phys. 64 R29 (1988)Google Scholar
2 Gaj, J.A., Bodin-Deshayes, C., Peyla, P., Cibert, J., Feuillet, G., d'Aubigné, Y. Merle, Romestain, R. and Wasiela, A., Proceedings of the International Conference on The Physics of Semiconductors, Beijing (1992), ed. Jiang, Ping and Zheng, Hou-Zhi, World Scientific, p.1936 Google Scholar
3. Chang, S.K., Lee, D., Nakata, H., Nurmikko, A.V., Kolodzielski, L.A. and Gunshor, R.L., J. Appl. Phys. 62 4835 (1987); A. Wasiela, Y.Merle d'Aubigné, J.E. Nicholls, D.E. Ashenford, B. Lunn, Solid State Commun. 76 263 (1990); B.Kuhn-Heinrich, W. Ossau, M. Popp, E. Bangert, A. Waag, G. Landwehr, Proceedings of the International Conference on The Physics of Semiconductors, Beijing (1992), ed. Ping Jiang and Hou-Zhi Zheng, World Scientific, p.923.Google Scholar
4 Gaj, J.A., Grieshaber, W., Bodin-Deshayes, C., Cibert, J., Feuillet, G., d'Aubigné, Y. Merle and Wasiela, A., to be publishedGoogle Scholar
5 Ténnies, D., Bacher, G., Forchel, A., Waag, A., Litz, Th., Hommel, D., Becker, Ch., Landwehr, G., Heuken, M. and Scholl, M., International Conference on II-VI Semiconductors, Newport (1993), proceedings in J. Crystal Growth.Google Scholar
6 Jouneau, P.H., Tardot, A., Feuillet, G., Mariette, H., Cibert, J., J. Appl. Phys., in press.Google Scholar
7 Moison, J.M., Guille, C., Houzay, F., Barthe, F. and Rompay, M. Van, Phys. Rev. B40 6149 (1989).Google Scholar
8 Grieshaber, W., Cibert, J., Gaj, J.A., d'Aubignd, Y. Merle and Wasiela, A., to be published.Google Scholar