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Atomic Scale Characterization of Oxygen Vacancy Segregation at SrTiO3 Grain Boundaries
Published online by Cambridge University Press: 21 March 2011
Abstract
We have examined the structure, composition and bonding at an un-doped 58° [001] tilt grain-boundary in SrTiO3 in order to investigate the control that the grain boundary exerts over the bulk properties. Room temperature and in-situ heating experiments show that there is a segregation of oxygen vacancies to the grain boundary that is increased at elevated temperatures and is independent of the cation arrangement. These measurements indicate that the widely observed electronic properties of grain boundaries may be due to an excess of mobile oxygen vacancies that cause a highly doped n-type region in the close proximity ( ≍ 1 unit cell) to the boundary. These results are shown to be consistent with both theoretical models and lower resolution chemical analysis.
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- Copyright © Materials Research Society 2001
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