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Atomic Profiles of High Energy (MeV) Si Implanted into GaAs

Published online by Cambridge University Press:  25 February 2011

Phillip E. Thompson ,
Robert G. Wilson ,
David C. Ingram  and
Peter P. Pronko
Phillip E. Thompson
Affiliation:
Naval Research Laboratory, Code 6812, 4555 Overlook Ave., S.W., Washington, D.C. 20375-5000
Robert G. Wilson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
David C. Ingram
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
Peter P. Pronko
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
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Abstract

High energy Si implantation into GaAs is of interest for the fabrication of fully implanted monolithic microwave integrated circuits. 30Si has been implanted into LEC GaAs at energies of 1, 2, 4, and 6 MeV. We have measured atomic concentration profiles using SIMS and carrier concentration profiles using an electrolytic CV procedure. Theoretical atomic profiles have been calculated using TRIM-86. Excellent SIMS dynamic range and low background (<1014/cm3) was achieved for the profiles by the use of 30Si. The range statistics and profile shape factors: Rm, Rp, ΔRp, skewness (Y1), kurtosis (B2), and maximum Si density (Nmax) have been determined from the SIMS data by applying a Pearson IV computer fitting routine. The first two moments (Rp and ΔRp) were also obtained from the carrier profiles and the theoretical profiles. The range and standard deviation obtained from each profile have a maximum difference of only 15%, and the difference is usually less than 10%. This is less than the mutual experimental uncertainty of 17%. The samples were activated using a furnace anneal (800°C, 15 min) with a Si3N4 cap and using rapid thermal anneal (1000°C, 10s) with and without a Si3N4 cap. No redistribution of Si was observed for any of the anneal conditions within experimental error.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 73
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Thompson, P. E., Dietrich, H. B., and Ingram, D. C., Nucl. Inst. and Meth. B6, 287(1985).Google Scholar
2. Thompson, P. E., Dietrich, H. B., Spencer, M., and Ingram, D. C., SPIE 530, 35(1985).Google Scholar
3. Thompson, P. E. and Dietrich, H. B., presented at the 1986 GaAs and Related Compounds Symposium, Las Vegas, NV, 1986(proceedings to be published).Google Scholar
4. Northcliffe, L. C. and Schilling, R. F., Nucl. Data Tables A7(3,4), 233 (1970).Google Scholar
5. Winterbon, K. B., Ion Implantation Range and Energy Deposition Distributions, Vol.2 (IFI/Plenum Data Company, New York, 1975).Google Scholar
6. Gibbons, J. F., Johnson, W. S., and Mylroie, S. W., Projected Range Statistics, 2nd Ed. (Dowden, Hutchinson, and Ross, Inc., Stroudsburg, PA, (1975).Google Scholar
7. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping Power and Range of Ions in Solids (Pergamon Press Inc., New York, 1985).Google Scholar