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Atomic Profiles and Electrical Characteristics of Very High Energy (8–20 MeV) Si Implants in GaAs

Published online by Cambridge University Press:  25 February 2011

Phillip E. Thompson ,
Harry B. Dietrich ,
James M. Eridon  and
Thomas Gresko
Phillip E. Thompson
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
Harry B. Dietrich
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
James M. Eridon
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
Thomas Gresko
Affiliation:
Department of Physics, George Mason University, Fairfax, VA 22030
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Abstract

High energy Si implantation into GaAs is of interest for the fabrication of fully implanted, monolithic microwave integrated circuits. Atomic concentration profiles of 8, 12, 16, and 20 MeV Si have been measured using SIMS. The range and shape parameters have been determined for each energy. The theoretical atomic concentration profile for 12 MeV Si calculated using TRIM-88 corresponded to the SIMS experimental profile. No redistribution of the Si was observed for either furnace anneal, 825° C, 15 min, or rapid thermal anneal, 1000°C, 10 s. The activation of the Si improved when co-implanted with S. The co-implanted carrier concentration profiles did not show dopant diffusion. Peak carrier concentration of 2×1018/cm3 was obtained with a Si and S dose of 1.5×104/cm2, each.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 665
Copyright
Copyright © Materials Research Society 1989

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References

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