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Atomic Ordering and Alloy Clustering in MBE-Grown InAsy Sb1-y Epitaxial Layers

Published online by Cambridge University Press:  25 February 2011

Tae-Yeon Seong ,
A.G. Norman ,
G.R. Booker ,
R. Droopad ,
R.L. Williams ,
S.D. Parker ,
P.D. Wang  and
R.A. Stradling
Tae-Yeon Seong
Affiliation:
Dept. of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.
A.G. Norman
Affiliation:
Dept. of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.
G.R. Booker
Affiliation:
Dept. of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.
R. Droopad
Affiliation:
Dept. of Physics, Imperial College, London SW17 2BZ, U.K.
R.L. Williams
Affiliation:
Dept. of Physics, Imperial College, London SW17 2BZ, U.K.
S.D. Parker
Affiliation:
Dept. of Physics, Imperial College, London SW17 2BZ, U.K.
P.D. Wang
Affiliation:
Dept. of Physics, Imperial College, London SW17 2BZ, U.K.
R.A. Stradling
Affiliation:
Dept. of Physics, Imperial College, London SW17 2BZ, U.K.
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Abstract

MBE InASySb1-y layers were grown at 370°C across the full composition range. TEM/TED examinations directly showed that separation into two phases had taken place for compositions 0.4<y<0.8 with plates 20 to 200nm thick occurring approximately parallel to the layer surface. The two phases in the individual specimens were tetragonally distorted and their compositions were deduced from the TED results. CuPt-type atomic ordering occurred and was most pronounced in the middle of the composition range. Alloy clustering was also present. Hall measurements showed that the carrier concentration was a maximum, and the mobility was a minimum, for the middle of the composition range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 907
Copyright
Copyright © Materials Research Society 1990

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References

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