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Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

Akira Usui*
Affiliation:
Fundanvttntal Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, JAPAN
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Abstract

Atomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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