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Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

Published online by Cambridge University Press:  10 February 2011

S. M. George ,
J.D. Ferguson  and
J.W. Klaus
S. M. George
Affiliation:
Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, [email protected]
J.D. Ferguson
Affiliation:
Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309
J.W. Klaus
Affiliation:
Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309
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Abstract

Thin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 93
Copyright
Copyright © Materials Research Society 2000

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