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Atomic Layer Deposition of Tantalum Nitride on Organosilicateand Organic Polymerbased Low Dielectric Constant Materials

Published online by Cambridge University Press:  17 March 2011

Oscar van der Straten ,
Yu Zhu ,
Jonathan Rullan ,
Katarzyna Topol ,
Kathleen Dunn  and
Alain Kaloyeros
Oscar van der Straten
Affiliation:
UAlbany Institute for Materials & School of NanoSciences and NanoEngineering, University at Albany – SUNY, Albany, NY 12203
Yu Zhu
Affiliation:
UAlbany Institute for Materials & School of NanoSciences and NanoEngineering, University at Albany – SUNY, Albany, NY 12203
Jonathan Rullan
Affiliation:
UAlbany Institute for Materials & School of NanoSciences and NanoEngineering, University at Albany – SUNY, Albany, NY 12203
Katarzyna Topol
Affiliation:
UAlbany Institute for Materials & School of NanoSciences and NanoEngineering, University at Albany – SUNY, Albany, NY 12203
Kathleen Dunn
Affiliation:
UAlbany Institute for Materials & School of NanoSciences and NanoEngineering, University at Albany – SUNY, Albany, NY 12203
Alain Kaloyeros
Affiliation:
UAlbany Institute for Materials & School of NanoSciences and NanoEngineering, University at Albany – SUNY, Albany, NY 12203
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Abstract

A previously developed metal-organic atomic layer deposition (ALD) tantalumnitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials forliner applications in advanced Cu/low-k interconnect metallization schemes.ALD of TaNx was performed at a substrate temperature of 250°C byalternately exposing low-k materials totertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed onboth organosilicate and organic polymer-based low-k materials was determinedand compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM)measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interfacebetween TaNx and the low-k materials after thermal annealing at350°C for 30 minutes was studied by examining interfacial roughness profilesusing cross-sectional imaging in a high-resolution transmission electronmicroscope (HR-TEM). The wetting and adhesion properties of Cu/low-k werequantified using a solid-state wetting experimental methodology afterintegration of ALD TaNx liners with Cu and low-k dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.13
Copyright
Copyright © Materials Research Society 2004

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