Article contents
Atomic Layer Deposition of SrO: Substrate and Temperature Effects
Published online by Cambridge University Press: 03 January 2013
Abstract
The atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.
- Type
- Articles
- Information
- MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 179 - 183
- Copyright
- Copyright © Materials Research Society 2012
References
REFERENCES
- 1
- Cited by