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Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates

Published online by Cambridge University Press:  01 February 2011

Justin C Hackley ,
J. Derek Demaree  and
Theodosia Gougousi
Justin C Hackley
Affiliation:
Physics, UMBC, 1000 Hilltop Circle, Baltimore, MD, 21250
J. Derek Demaree
Affiliation:
[email protected], Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD, 21005-5069, United States
Theodosia Gougousi
Affiliation:
[email protected], UMBC, Physics, 1000 Hilltop Circle, Baltimore, MD, 21250, United States
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Abstract

The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethylamido)hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different pre-deposition treatments involving an HF and a NH4OH wet chemical etch that has been shown to remove most of the Ga and As native oxides. Spectroscopic ellipsometry (SE) confirms linear growth rates of 1.05±0.05 Å/cycle for all surfaces. Rutherford backscattering spectrometry (RBS) shows that steady-state growth of 2.6×1014 Hf/cm2/cycle is reached after 10 ALD cycles for the HF-etched GaAs surface. X-ray photoelectron spectroscopy (XPS) indicates the presence of native oxides on both GaAs starting surfaces after 10 cycles due to postdeposition surface oxidation. However, the presence of the native oxide is not detected for thicker 15 and 20 cycle samples indicating passivation of the surface and suppression of the interfacial layer formation.

Keywords

atomic layer depositiondielectricnucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H04-19
Copyright
Copyright © Materials Research Society 2008

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References

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