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Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

Published online by Cambridge University Press:  04 April 2011

Paul R. Chalker ,
Paul A. Marshall ,
Simon Romani ,
Matthew J. Rosseinsky ,
Simon Rushworth ,
Paul A. Williams ,
John Buckett ,
Neil McSporran  and
John Ridealgh
Paul R. Chalker
Affiliation:
Materials Science and Engineering, University of Liverpool, Liverpool, UK L69 3BX
Paul A. Marshall
Affiliation:
Materials Science and Engineering, University of Liverpool, Liverpool, UK L69 3BX
Simon Romani
Affiliation:
Materials Science and Engineering, University of Liverpool, Liverpool, UK L69 3BX
Matthew J. Rosseinsky
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, UK L69 7ZD
Simon Rushworth
Affiliation:
SAFC Hitech, Power Road, Bromborough, Wirral, Merseyside, UK CH62 3QF
Paul A. Williams
Affiliation:
SAFC Hitech, Power Road, Bromborough, Wirral, Merseyside, UK CH62 3QF
John Buckett
Affiliation:
Pilkington Technology Management Limited, Hall Lane, Lathom, Ormskirk, Lancashire, UK, L40 5UF
Neil McSporran
Affiliation:
Pilkington Technology Management Limited, Hall Lane, Lathom, Ormskirk, Lancashire, UK, L40 5UF
John Ridealgh
Affiliation:
Pilkington Technology Management Limited, Hall Lane, Lathom, Ormskirk, Lancashire, UK, L40 5UF
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Abstract

Thin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

Keywords

atomic layer depositiontransparent conductoroptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1315: Symposium MM – Transparent Conducting Oxides and Applications , 2011 , mrsf10-1315-mm03-08
Copyright
Copyright © Materials Research Society 2011

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References

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