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Atomic Hydrogen Assisted Growth of Si-Ge Heterostructures on (001) Si

Published online by Cambridge University Press:  03 September 2012

J.-M. Baribeau ,
D.J. Lockwood ,
S.J. Rolfe ,
R.W.G. Syme  and
H.J. Labbé
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A 0R6, CANADA
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A 0R6, CANADA
S.J. Rolfe
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A 0R6, CANADA
R.W.G. Syme
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A 0R6, CANADA
H.J. Labbé
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A 0R6, CANADA
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Abstract

A study of the interface chemical and physical abruptness of Si-Ge heterostructures grown on (001) Si by molecular beam epitaxy under atomic hydrogen exposure is reported. Atomic hydrogen (AH) was produced by the dissociation of molecular hydrogen interacting with a hot tungsten filament. Secondary-ion mass spectroscopy (SIMS) of structures made of alternating Ge (0.5 nm)/Si (40 nm) layers demonstrated that AH can effectively suppress Ge surface segregation. The segregation length was reduced from 1.5 nm to about 0.5 nm in films grown at a hydrogen partial pressure of −5 × 10-3 Pa and cell temperature of 2140 °C with an estimated cracking efficiency of ~5%. However, the high hydrogen background pressure had detrimental effects on the physical sharpness of the interfaces. This was evidenced by comparing the interface quality of Si/Ge atomic layer superlattices grown with and without AH exposure. X-ray reflectivity and Raman spectroscopy revealed a significant increase of the interface roughness, although the periodic character and the good crystallinity of the structures were preserved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 113
Copyright
Copyright © Materials Research Society 1997

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