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Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

Published online by Cambridge University Press:  15 February 2011

P. Brogueira ,
V. Chu  and
J.P. Conde
P. Brogueira
Affiliation:
Dept. of Physics, Instituto Superior Técnico, Lisbon, Portugal
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal.
J.P. Conde
Affiliation:
Dept. of Materials Engineering, Instituto Superior Técnico, Lisbon, Portugal
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Abstract

The initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 519
Copyright
Copyright © Materials Research Society 1999

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References

1. Street, R. A., Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991).Google Scholar
2. Konuma, M., curtins, H., Sarott, F. A. and Veprek, S., Phil. Mag. B 55, 377 (1987).Google Scholar
3. Matsuda, A., J. Non-Cryst. Solids 59–60, 767 (1983).Google Scholar
4. Yoshimi, M., Ma, W., Horiuchi, T., Lim, C.C., De, S.C., Hahari, K., Okamoto, H. and Mamakawa, Y., Mater. Res. Soc. Symp. Proc. 258, 845 (1992).Google Scholar
5. Conde, J.P., Silva, H. and Chu, V., Mater. Res. Soc. Symp. Proc., to be published (1998).Google Scholar
6. Lanin, J.S., Semiconductors and Semimetals, Part B (Academic, New York, 1984), Vol 21.Google Scholar
7. Kaneko, T., Wakagi, M., Onisawa, K. and Minemura, T., Appl. Phys. Lett. 64, 1865 (1994).Google Scholar
8. Veprek, S., Sarrot, F. A. and Iqbal, Z., Phys. Rev. B 36, 3344 (1987).Google Scholar
9. Tsu, R., Hernandez, J. G., Chao, S. S., Lee, S. C. and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).Google Scholar
10. Kakinuma, H., Mohri, M. and Tsuruoka, T., J. Appl. Phys. 70, 7374 (1991).Google Scholar
11. He, Y., Yin, C., Cheng, G., Wang, L., Liu, X. and Hu, G.Y., J. Appl. Phys. 75, 797 (1994).Google Scholar
12. Saitoh, K., Kondo, M., Fukawa, m., Nishimiya, T., Matsuda, A., Futako, W. and Shimizu, I., Appl. Phys. Lett. 71, 3403 (1997).Google Scholar
13. Smith, L.L., Srinivasan, E. and Parsons, G.N., J. Appl. Phys. 82, 6041 (1997).Google Scholar