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Atomic Force Microscopy of Carbon Nanotubes and Nanoparticles

Published online by Cambridge University Press:  15 February 2011

Ping Li
Affiliation:
University of Hawaii, Department of Physics and Astronomy, Watanabe Hall, 2505 Correa Road, Honolulu, HI 96822
Klaus Satftler
Affiliation:
University of Hawaii, Department of Physics and Astronomy, Watanabe Hall, 2505 Correa Road, Honolulu, HI 96822
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Abstract

Very hot carbon vapor was deposited on highly-oriented pyrolytic graphite (HOPG) and on sapphire substrates. Using atomic force microscopy, the obtained carbon structures are analyzed. It is found that carbon nanotubes and cones had formed on the graphite substrate but not on sapphire. Instead, spherical-type nanoparticles are analyzed on sapphire. A particle with double-conical shape is found on the graphite substrate. The two observed cone angles 19° and 60° are explained by perfect network closure of sectors of curled graphene sheets.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Ge, M. and Sattler, K., SCIENCE 260, 515 (1993)Google Scholar
2. Ge, M. and Sattler, K., Appl. Phys. Lett. 64, 710 (1994)Google Scholar
3. Ge, M. and Sattler, K., Appl. Phys. Lett. 65, 2284 (1994)Google Scholar
4. Ge, Maohui and Sattler, Klaus, Chem. Phys.Lett. 220, 192196 (1994)Google Scholar
5. Vanselow, R., Braun, M., and Merwe, J. H. Van der, Surf. Sci. 214, 197 (1989)Google Scholar
6. Land, T. A., Michely, T., Behm, R. J., Hemminger, J. C., and Comsa, G., Surf. Sci. 264, 261 (1992)Google Scholar
7. Wada, N. and Solin, S. A., Physica 105B, 353 (1981)Google Scholar
8. Sattler, K., Raina, G., Ge, M., Xhie, J., Venkateswaran, N., and Siegel, D., J. of Appl. Phys. 76, 546 (1994)Google Scholar