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Atomic Diffusion and Strain Measurement on Si Grating Structures by X-Ray Diffraction

Published online by Cambridge University Press:  15 February 2011

So Tanaka ,
Christopher C. Umbach ,
Qun Shen  and
Jack M. Blakely
So Tanaka
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
Christopher C. Umbach
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
Qun Shen
Affiliation:
Cornell High Energy Synchrotron Source and School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
Jack M. Blakely
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
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Abstract

We have applied high resolution synchrotron X-ray diffraction to two-dimensional (2D) Si gratings with wavelengths of 300 and 400nm. We show that this method is very sensitive to both the geometry (grating wavelength, height, and angle of inclined sidewall) and the state of strain. Morphology changes produced by vacuum annealing can be detected so that the mass transport rates on Si surfaces can be measured. Strain measurements show that grating pillars covered with 1 lnm of thermal oxide were under tension (ε = 3.7 × 10−4). This strain was elastically relaxed by removing the oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 61
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Tapfer, L. and rambow, P., Appl. Phys. A. 50, 3 (1990).Google Scholar
2. Macrander, A.T. and Slusky, S.E.G., Appl. Phys. Lett. 56, 443 (1990).Google Scholar
3. Shen, Q., Umbach, C.C., Weselak, B. and Blakely, J.M., Phys. Rev. B 48, 17967 (1993).Google Scholar
4. Shen, Q., eselak, B. and Blakely, J.M., Appl. Phys. Lett. 64, 3556 (1994).Google Scholar
5. Darhuber, A.A., Koppensteiner, E., Straub, H., Brunthaler, G., Faschinger, W., and Bauer, G., J.Appl. Phys. 76, 7816 (1994).Google Scholar
6. Keeffe, M.E., Umbach, C.C. and Blakely, J.M., J. Phys. Chem. Solids 55, 965 (1994)Google Scholar
7. Warren, B. E., X-ray Diffraction (Addison-Wesley, New York 1969)Google Scholar
8. Mullins, W.W, J. Appl. Phys. 30, 77 (1959).Google Scholar
9. EerNisse, E.P., Appl. Phys. Lett. 30, 290 (1977).Google Scholar
10. Kobeda, E. and Irene, E.A., J. Vac. Sci. Tech. B6, 574 (1988).Google Scholar
11. Kao, D., McVittie, J.P., Nix, W.D., Saraswat, K.C., IEEE Trans. Elect. Dev. ED-34, 1008 (1987).Google Scholar
12. Marcus, R. B., Ravi, T.S., Gmitter, T., Chin, K., Liu, D., Orvis, W.J., Ciarlo, D.R., Hunt, C.E. and Trujillo, J., Appl. Phys. Lett. 56, 236 (1990).Google Scholar
13. Jaccodine, R.J. and Schlegel, W.A., J. Appl. Phys. 37, 2421 (1966)Google Scholar