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Atomic Arrangement of Al Near the Phase Boundaries Between √3×√3-A1 and 7×7 Structures on Si(111) Surfaces

Published online by Cambridge University Press:  25 February 2011

Katsuya Takaoka ,
Masamichi Yoshimura ,
Takafumi Yao ,
Tomoshige Sato ,
Takashi Sueyoshi  and
Masashi Iwatsuki
Katsuya Takaoka
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
Tomoshige Sato
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
Takashi Sueyoshi
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
Masashi Iwatsuki
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
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Abstract

Scanning tunneling microscopy (STM) is used to study the structure of Al-√3×√3 domains on the Si(lll)-7×7 surface and the atomic arrangement near the domain boundary. Al-√3×√3 domains grow from the lower side of the <112> step and extend over the Si-7×7 terrace. The phase transition is observed to occur in units of the 7×7 size. Detailed investigation at around the boundary reveals that faulted halves of the 7×7 unit are adjacent to the boundary on the Si-7×7 side, while on the Al-√3×√3 side, Al adatoms occupy the T4 sites except for the rows adjacent to the phase boundaries where Al atoms occupy the Si adatom sites. The latter Al atoms play an important role to retain the dimer structure at the boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 97
Copyright
Copyright © Materials Research Society 1993

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References

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