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Atomic and Electronic Structure of Interfaces at Sic Studied by Indirect Super Hrtem and Electron Spectroscopyn Imaging

Published online by Cambridge University Press:  01 February 2011

J. Y. Yan ,
Hideki Ichinose ,
Fu-Rong Chen ,
J. J. Kai  and
Eriko Takuma
J. Y. Yan
Affiliation:
Center of Electron Microscopy, Dept. of Engineering and System Science, National Tsing Hua University, Hsin Chu, Taiwan.
Hideki Ichinose
Affiliation:
Department of Materials Science, School of Engineering, The University of Tokyo, Japan
Fu-Rong Chen
Affiliation:
Center of Electron Microscopy, Dept. of Engineering and System Science, National Tsing Hua University, Hsin Chu, Taiwan.
J. J. Kai
Affiliation:
Center of Electron Microscopy, Dept. of Engineering and System Science, National Tsing Hua University, Hsin Chu, Taiwan.
Eriko Takuma
Affiliation:
Department of Materials Science, School of Engineering, The University of Tokyo, Japan
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Abstract

Obtaining electronic and atomic structure of material simultaneously is very important for developing the nano-technology. In this paper, we demonstrate that atomic and electronic structure of an interface can be extracted with combination of Gerchberg-Saxton indirect microscopy and electron spectroscopy imaging (ESI) technique. Basically, Gerchberg-Saxton algorithm includes two projections. Projection in the real space is a maximum entropy (ME) de-convolution process and in reciprocal space is an amplitude substitution process. It has been shown that Gerchberg-Saxton algorithm can extend the structural resolution to near 0.1nm. An application case of Gerchberg-Saxton algorithm to solve the atomic structure for 3C-polytypic SiC boundary is shown.

ESI spectrum processed by FFT interpolation, maximum entropy de-convolution and wavelet transformation allow us to extract 2-dimensional map of the sp2/sp3 with a sub-nanometer resolution. Grain boundary and interface at SiC are good candidates for this study, since the bond distance of Si-C is slightly less than 0.1nm which is not routinely resolvable using a FEG TEM and Si-L (99eV) and C-K-edges (283 eV) locate in a reasonable energy range. The resultant electronic structure can be compared with that calculated using WIEN97. An example of quantitative analysis on 2-dimensional sp3/sp2 map deduced from the C K-edge of ESI spectra acquired from 6H-SiC is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R12.2
Copyright
Copyright © Materials Research Society 2002

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