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Atom Probe Analysis of Native Oxides and the Thermal Oxide/Silicon Interface.

Published online by Cambridge University Press:  26 February 2011

C. R. M. Grovenora ,
A. Cerezo  and
G. D. W. Smith
C. R. M. Grovenora
Affiliation:
Department of Metallurqy and Science of Materials,Parks Road,OXFORD,UK.
A. Cerezo
Affiliation:
Department of Metallurqy and Science of Materials,Parks Road,OXFORD,UK.
G. D. W. Smith
Affiliation:
Department of Metallurqy and Science of Materials,Parks Road,OXFORD,UK.
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Abstract

The Pulsed Laser Atom Probe has been used to determine for the first time the stoichiometry of both the native oxide on Si and of the SiO2/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 199
Copyright
Copyright © Materials Research Society 1985

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References

1. Cheng, Y.C., Progress in Surface Science, 8, 181 (1977).Google Scholar
2. Sakurai, T. and Sunano, T., J.Appl.Phys., 52, 2889 (1981).Google Scholar
3. Helms, C.R., Strausser, Y.E. and t7.Snicer, E., Appl.Phys.Lett., 33, 767 (1978).Google Scholar
4. Waner, J.F. and Wilmsen, C.W.,J.Appl.Phys.,50, 874 (1979).Google Scholar
5. Raider, S.I. and Flitsch, R., J.Vac.Sci.Tech.,13, 58 (1976).Google Scholar
6. Sigmon, T.W., Chu, W.K., Lugujjo, E. and Mayer, J.W., Appl.Phys.Lett., 24,105(1974).Google Scholar
7. Krivanek, O.L., Shenq, T.T. and Tsui, D.C., Appl.Phys.Lett., 32, 407 (1978).Google Scholar
8. Lenahan, P.M. and Dressendorfer, P.V., J.Appl.Phys., 54, 1457 (1983).Google Scholar
9. Hattori, T. and Suzuki, T., Appl.Phys.Lett.,43, 470 (1983).CrossRefGoogle Scholar
10. Litovchenko, V.G., Sov.Phys.-Semiconductors. 6, 696 (1972).Google Scholar
11. Deal, B.E., Sklar, M., Grove, A.S. and Snow, E.H., J.Electrochem.Soc.,114,226(1967)Google Scholar
12. Wagner, R., Field Ion Microscopy, Sprinaer-Verlag,Berlin (1982)Google Scholar
13. Kelloqg, G.L. and Tsong, T.T., J.Appl.Phys. 51, 1184 (1980)Google Scholar
14. Grovenor, C.R.M., Cerezo, A. and Smith, G.D.U., Microscopy of Semiconducting Materials (Eds.Cullis, A.G., Davidson, S.M. and Booker, G.R.) Inst.Phys., London(1983) p.109.Google Scholar
15. Mazur, J.H., Gronsky, R. and Washburn, J., as [14] p. 77.Google Scholar
16. Agius, B., Rigo, S., Rochet, F., Froment, M., Maillot, C., Roulet, H. and Dufour, G., Appl. Phys. Lett. 44,48 (1984).CrossRefGoogle Scholar
17. Shunk, F.A., Constitution of Binary Alloys Second Suppl. McGraw-Hill,New York 1969 p. 522.Google Scholar