Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-02T17:03:44.370Z Has data issue: false hasContentIssue false
  • English
  • Français

Assessment of the Use of Microcrystalline Silicon Materials Grown at Rates Near 15 Å/s as i-layer Material for Single and Multi-Junction Solar Cells

Published online by Cambridge University Press:  17 March 2011

S.J. Jones ,
R. Crucet ,
R. Capangpangan ,
M. Izu  and
A. Banerjee
S.J. Jones
Affiliation:
Energy Conversion Devices, Inc., Troy, MI 48084
R. Crucet
Affiliation:
Energy Conversion Devices, Inc., Troy, MI 48084
R. Capangpangan
Affiliation:
Energy Conversion Devices, Inc., Troy, MI 48084
M. Izu
Affiliation:
Energy Conversion Devices, Inc., Troy, MI 48084
A. Banerjee
Affiliation:
United Solar Systems Corp., Troy, MI 48084
Get access

Abstract

A microwave-based technique has been used to prepare microcrystalline Si (µc-Si) materials rates near 15 Å/s. The use of these materials as intrinsic layers (i-layers) for single and multi-junction devices has been assessed. Since the high deposition rates allow for fabrication of the required thicker µc-Si i-layers in a similar amount of time to that used for high quality a-SiGe i-layers (rates of 1-3 Å/s), the materials are attractive, low cost replacements for a-SiGe bottom cell i-layers in a-Si/a-SiGe and a-Si/a-SiGe/a-SiGe multi-junction cells. Single-junction nip, a-Si/µc-Si and a-Si/a-SiGe/µc-Si devices have been fabricated. For these devices, the doped and amorphous layers were deposited using conventional rf glow discharge processes and deposition equipment separate from that used to fabricate the µc-Si materials. 7.0% efficiencies have been achieved for single-junction devices while pre-light soaked 9.8 and 11.4% efficiencies have been achieved for the tandem and triple-junction devices, respectively. The single-junction devices exhibit a degradation of only 0-2% after long term (1000 hrs.) of light soaking demonstrating a high degree of stability. Based on the present status, the µc-Si material prepared at high rates qualifies as a reasonable candidate for the i-layer of a bottom cell of a triple-junction device. Improvements in the performance, particularly the FF, will be needed before use in single-junction and tandem devices can be considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A15.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Meier, J., Keppner, H., Dubail, S., Kroll, U., Torres, P., Pernet, P., Ziegler, Y., Selvan, J.A. Anna, Cuperus, J., Fischer, D., Shah, A., Mat. Res. Soc. Symp. Proc. 507, 139 (1998).Google Scholar
2. Torres, P., Meier, J., Kroll, U., Beck, N., Keppner, H., Shah, A., 26th IEEE Photo. Sp.Con.,711(1997).Google Scholar
3. Saito, K., Sano, M., Matuda, K., Proc. 2nd World Conf. Exh. PV Solar En. Conv., 351 (1998).Google Scholar
4. Repmann, T., Appenzeller, W., Roschek, T., Rech, B. and Wagner, H., Pro. 28th IEEE Photovoltaics Spec. Conf., to be published.Google Scholar
5. Jones, S., Crucet, R., Deng, X., Doehler, J., Myatt, A., Mat. Res. Soc. Symp. Proc. 557, 567 (1999).Google Scholar
6. Jones, S., Crucet, R., Deng, X., Williamson, D. and Izu, M., Mat. Res. Soc. Symp. 2000, to be pub.Google Scholar
7. Wang, Q., Iwaniczko, E., Mahan, A.H., Williamson, D.L., Mat. Res. Soc. Symp. 507, 903 (1998).Google Scholar