Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-17T16:12:37.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Assessment of Surface Damage of Gallium Arsenide due to Reactive Ion Etching

Published online by Cambridge University Press:  21 February 2011

M. S. Puttock ,
H. Thomas ,
D. V. Morgan ,
U. Rossow ,
D. R. T. Zahn ,
W. Richter ,
K. P. Hilton  and
J. Woodward
M. S. Puttock
Affiliation:
University of Wales College of Cardiff, Electrical, Electronic and Systems Engineering, UWCC, Cardiff, Wales.
H. Thomas
Affiliation:
University of Wales College of Cardiff, Electrical, Electronic and Systems Engineering, UWCC, Cardiff, Wales.
D. V. Morgan
Affiliation:
University of Wales College of Cardiff, Electrical, Electronic and Systems Engineering, UWCC, Cardiff, Wales.
U. Rossow
Affiliation:
Institute of Solid State Physics, Berlin West Germany.
D. R. T. Zahn
Affiliation:
Institute of Solid State Physics, Berlin West Germany.
W. Richter
Affiliation:
Institute of Solid State Physics, Berlin West Germany.
K. P. Hilton
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK.
J. Woodward
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK.
Get access

Abstract

Crystal damage of GaAs(100) caused by Reactive Ion Etching (RIE) using a mixture of Cl2 and Ar gas has been assessed using Surface Roughness (Ra), Resonant Raman Spectroscopy (RRS), Schottky diodes, and Spectroscopic Ellipsometry (SE). Plasma conditions for minimum induced damage have been determined and compared to optimised RIE processes using plasma gases SiCl4, CH4-H2, CCl2F2 and Ar. The SiCl4 plasma was found to produce the least crystal damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 255
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ibbotson, D.E. & Flamm, D.L., Solid State Tech., Oct 1988, p77.Google Scholar
[2] Pang, S.W., J.Electrochem Soc. Solid State Science & Tech., April 1986, p784.Google Scholar
[3] Kirillov, D., Cooper, C.B. III, & Powell, R.A., J. Vac. Sci. Technol. B 4(6), 1986, p1316.Google Scholar
[4] Yamada, H., Ito, H. & Inaba, H., J.Vac.Sci.Technol. B 3(3), 1985, p884.Google Scholar
[5] Hilton, K.P. & Woodward, J., Vacuum, 38, No 7, 1988, p519.Google Scholar
[6] Carter, A.J. et al, IEE Proceedings, 136 J, No 1, February 1989, p 2.Google Scholar
[7] Loudon, R., Adv.Phys. 13, 1964, p 423.Google Scholar
[8] Wagner, J., & Hoffman, Ch., App. Phys. Lett. 50, (11), March 1987, p682.Google Scholar
[9] Aspnes, D.E., Surface Sci., 101, 1980, p84.Google Scholar
[10] Rossow, U., Fieseler, T., Geurts, J., Zahn, D.R.T., Richter, W., Puttock, M.S., Hilton, K.P., J.Phys:Condens. Matter 1 1989, SB231.Google Scholar