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Assessment of Metallic Trace Contaminants on Silicon Wafer Surfaces

Published online by Cambridge University Press:  21 February 2011

H. J. Rath ,
P. Stallhofer ,
D. Huber ,
P. Eichinger  and
I. Ruge
H. J. Rath
Affiliation:
Wacker-Chemitronic GmbH, P.O. Box 1140, D-8263 Burghausen, FRG
P. Stallhofer
Affiliation:
Wacker-Chemitronic GmbH, P.O. Box 1140, D-8263 Burghausen, FRG
D. Huber
Affiliation:
Wacker-Chemitronic GmbH, P.O. Box 1140, D-8263 Burghausen, FRG
P. Eichinger
Affiliation:
Fraunhofer-lnstitut für Festkörpertechnologie (IFT), Paul -Gerhardt-Allee 42, D-8000 MUnchen 60, FRG
I. Ruge
Affiliation:
Fraunhofer-lnstitut für Festkörpertechnologie (IFT), Paul -Gerhardt-Allee 42, D-8000 MUnchen 60, FRG
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Abstract

Neutron activation, atomic absorption, and voltammetric techniques are presented as appropriate analytical tools to monitor trace amounts of metallic impurities on large diameter silicon wafers. Detection limits and results are compared for standard wafers implanted with Fe, Cu, and Ni. DLTS measurements are included for implanted and as-grown doped wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 13
Copyright
Copyright © Materials Research Society 1985

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References

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