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Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4

Published online by Cambridge University Press:  10 February 2011

Carmela Amato-Wierda ,
Edward T. Norton Jr  and
Derk A. Wierda
Carmela Amato-Wierda
Affiliation:
Materials Science Program, University of New Hampshire, Durham, NH 03824, [email protected]
Edward T. Norton Jr
Affiliation:
Materials Science Program, University of New Hampshire, Durham, NH 03824, [email protected]
Derk A. Wierda
Affiliation:
Visiting scientist, Department of Chemistry, Saint Anselm College, Manchester, NH 03102
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Abstract

Silane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)4and NH3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe2)4 and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 97
Copyright
Copyright © Materials Research Society 2000

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