Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:56:34.813Z Has data issue: false hasContentIssue false
  • English
  • Français

As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

Published online by Cambridge University Press:  26 February 2011

J. M. Zavada ,
R. G. Wilson  and
S. W. Novak
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park, NC 27709
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
S. W. Novak
Affiliation:
Evans East Inc., Plainsboro, NJ 08356
Get access

Abstract

Indium phosphide (InP) and its related alloys have gained increased importance in recent years due to their widespread application in opto-electronics and high speed microelectronics. Ion beam processing has been used to produce electrical activity in selective areas of wafers and for device isolation. However, major problems remain concerning the location, electrical/chemical activity, and thermal stability of the implanted atoms in such devices. In this paper, we present detailed results concerning the distribution of 1H and Be atoms implanted into single crystal InP wafers. Secondary ion mass spectrometry has been used to depth profile 1H and Be implanted at different engergies, from 0.1 to 1.0 MeV, and with fluences up to 1016 cm2. Implanted samples have also been examined after furnace annealing to determine the onset and extent of thermal redistribution. Resulting profiles have been compared with corresponding implants into single crystal GaAs to help clarify diffusion behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 881
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sharma, B. L., Solid State Tech., 113 (1989).Google Scholar
2. Kruppa, W. and Boos, J. B., IEEE Electron Device Lett. EDL–8, 223 (1987).Google Scholar
3. Rao, M. V. and Nadella, R. K., J. Appl. Phys. 67, 1761 (1990).Google Scholar
4. Pearton, S. J., Corbett, J. W., and Stavola, M., Hydrogen in Crystalline Semiconductors, (Springer-Verlag, Heidelberg, 1991).Google Scholar
5. Liou, L. L., Spitzer, W. G., Zavada, J. M. and Jenkinson, H. A., J. Appl. Phys. 59, 1936 (1986)Google Scholar
6. Christel, L. A. and Gibbons, J. F., J. Appl. Phys. 52., 5050 (1981).Google Scholar
7. Favennec, P. N., Gauneau, M., and Salvi, M., Solid State Phenomena, 377 (1988).Google Scholar
8. Tang, A. C. T., Sealy, B. J., and Rezazadeh, A. A., J. Appl. Phys. 66, 2759 (1989).Google Scholar