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a-Si:H Thin Film Transistors on Rollable 25-μM Thick Steel Foil

Published online by Cambridge University Press:  10 February 2011

E.Y. Ma  and
S. Wagner
E.Y. Ma
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We report the first amorphous silicon thin film transistors (TFTs) on flexible, ultra-thin substrates of 25 μm thick stainless steel foil. The transistors remain operational under convex or concave bending down to 2.5 mm radius of curvature. Taking advantage of the flexibility and resiliency of these devices, we have successfully fabricated TFTs using only xerographic toner masks printed directly on to the steel substrate and using mechanical alignment in the laser printer to obtain the necessary overlay accuracy. The goal of our work is to develop a foldable active-matrix transistor backplane, at low cost and high throughput, for use in highly rugged and portable applications such as foldable intelligent maps. Our results suggest that such foldable backplane circuits are feasible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 13
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Gleskova, H., Wagner, S. and Suo, Z., “a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150 °C,” MRS Spring 1998 Symposium B, to be published.Google Scholar
[2] Gere, J.M. and Timoshenko, S.P., Mechanics of Materials, PWS-Kent Publ. Co., Boston, 1990, p. 252.Google Scholar
[3] Wu, C.C., Theiss, S., Lu, M.H., Sturm, J.C. and Wagner, S., “Integration of Organic LEDs and Amorphous Silicon TFTs onto Unbreakable Metal Foil Substrates,” Tech. Digest International Electron Devices Meeting, San Francisco, CA, Dec, 8-11, 1996, IEEE, Piscataway, NJ, 1996, Paper 30.8.1, pp. 957–959.Google Scholar
[4] Wu, C.C., Theiss, S.D., Gu, G., Lu, M.H., Sturm, J.C., Wagner, S. and Forrest, S.R., “Organic LEDs Integrated with a-Si TFTs on Lightweight Metal Substrates,” SID Tech. Dig., vol. 28, May 1997, pp. 67–70.Google Scholar
[5] Theiss, S.D. and Wagner, S., “Flexible Lightweight Steel-Foil Substrates for Amorphous Silicon Thin-Film Transistors,” AM-LCD '96 Tech. Dig., 1996, pp. 365–368.Google Scholar
[6] Gleskova, H., Könenkamp, R., Wagner, S. and Shen, D., “Electrophotographically Patterned Thin-Film Silicon Transistors,” Electron Device Letters, vol 17, No. 6, 1996, pp. 264–266.Google Scholar