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A-Si:H Solar Cells Deposited Using VHF–PECVD

Published online by Cambridge University Press:  10 February 2011

W. G. J. H. M. Van Sark ,
J. Bezemer ,
R. Van Der Heijden  and
W. F. Van Der Weg
W. G. J. H. M. Van Sark
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
J. Bezemer
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
R. Van Der Heijden
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
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Abstract

A-Si:H p+-i-n+ solar cells have been made employing plasma enhanced chemical vapour deposition at frequencies between 30–80 MHz. Here, only the i-layer was fabricated at these very high frequencies (VHF). Both the p+- and n+-layer were made using 13.56 MHz. A previous study has shown the material quality to depend on mainly the applied rf-power, and only slightly on the frequency. It should be noted that for homogeneity reasons a certain optimized pressure is required for each frequency. There is a clear correlation between material quality and solar cell parameters. An initial efficiency of 10 % has been obtained for cells deposited at 65 MHz using a low power density, while the deposition rate still is 2–3 times higher than the one at 13.56 MHz. Light-soaking reveals stabilisation at 6 % for the best cell, which compares well to conventional 13.56 MHz cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 21
Copyright
Copyright © Materials Research Society 1996

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