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A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

Published online by Cambridge University Press:  21 February 2011

M. Vieira ,
R. Martins ,
E. Fortunato ,
F. Soares  and
L. Guimaraes
M. Vieira
Affiliation:
Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa Quinta da Torre, 2825 Monte da Caparica, Portugal.
R. Martins
Affiliation:
Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa Quinta da Torre, 2825 Monte da Caparica, Portugal.
E. Fortunato
Affiliation:
Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa Quinta da Torre, 2825 Monte da Caparica, Portugal.
F. Soares
Affiliation:
Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa Quinta da Torre, 2825 Monte da Caparica, Portugal.
L. Guimaraes
Affiliation:
Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa Quinta da Torre, 2825 Monte da Caparica, Portugal.
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Abstract

The determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 863
Copyright
Copyright © Materials Research Society 1991

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References

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