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A-Si FETs With Improved On/Off Characteristics

Published online by Cambridge University Press:  25 February 2011

Yasutaka Uchida  and
Masakiyo Matsumura
Yasutaka Uchida
Affiliation:
Takushoku University, Dept. of Electronic Engineering, Hachioji-shi, Tokyo 193, Japan
Masakiyo Matsumura
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Meguro-ku, Tokyo 152, Japan
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Abstract

This paper describes the experimental and theoretical results of Distributed Threshold Voltage FETs. Based on these results important advantages of DTV FET are clarify and a novel device structure has been proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 247
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. LeComber, P. G., Spear, W. E. and Ghaith, A., Electron. Lett. 15, 179 (1979).CrossRefGoogle Scholar
2. Sugiura, O. and Matsumura, M., IECE of Japan J65–C, 914 (1982) [in Japanese].Google Scholar
3. Hayama, H. and Matsumura, M., Appl. Phys. Lett. 36, 754 (1980).Google Scholar
4. Uchida, Y. and Matsumura, M., Jpn. J. Appl. Phys. 27, L2379 (1988).CrossRefGoogle Scholar
5. Matsumura, M., Berkel, C. and Uchida, Y., Int. Topical Conf. on Hydrogenated Amorphous Silicon Device and Technology, 190 (1988).Google Scholar
6. Matsumura, M. and Nara, Y., J. Appl. Phys. 51, 6443 (1980).CrossRefGoogle Scholar
7. Uchida, Y., Yue, Y., Kamase, F., Suzuki, T., Hattori, T. and Matsumura, M., Jpn. J. Appl. Phys. 25, 1633 (1986).Google Scholar
8. Okada, H., Uchida, Y. and Matsumura, M., Jpn. J. Appl. Phys. 25, L718 (1986).CrossRefGoogle Scholar
9. Uchida, Y. and Matsumura, M., IEEE Electron Device Lett. EDL–5, 105 (1984).CrossRefGoogle Scholar
10. Uchida, Y. and Matsumura, M., Jpn. J. Appl. Phys. 24, L812 (1985).CrossRefGoogle Scholar