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a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge

Published online by Cambridge University Press:  25 February 2011

Y. Okada ,
J. Chen ,
I. H. Campbell ,
P. M. Fauchet  and
S. Wagner
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
J. Chen
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
I. H. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
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Abstract

a-Si and μc-Si were grown from SiF4 with H2 dilution in a DC glow discharge. The crystallinity of films deposited over a range of substrate temperatures and SiF4/H2 flow ratios was studied by Raman spectroscopy and the boundary between microcrystalline and amorphous Si was determined. We find that μc-Si can be grown from SiF4 with less H2 dilution than from SiH4. In the SiF4/H2 system, the etching by of F atoms appears responsible for μc-growth; H atoms play an important role in balancing growth and etching reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 93
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Lee, K. F., Gibbons, J. F., Saraswat, K. C. and Kamins, T. I., Appl. Phys. Lett., 35, 173 (1979)Google Scholar
2. Mimura, A., Konishi, N., Ono, K., Ohwada, J., Hosokawa, Y., Ono, Y., Suzuki, T., Miyata, K., Kawakami, H., IEEE Trans. Electron Devices, 36, 351 (1989)CrossRefGoogle Scholar
3. Guimaraes, J. L., Martins, R., Fortunato, E., Ferreira, I., Santos, M. and Garvalho, N., Mat. Res. Soc. Symp. Proc., Vol 118, p617, Material Research Society, 1988 Google Scholar
4. Martins, R., Vieira, M., Fortunato, E., Santos, M., Ferreira, I., Lavado, M. and Guimaraes, L., Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, p35, New York, 1988 Google Scholar
5. Fujiioka, H., Deguchi, T., Takazaki, K. and Takada, T., IEDM Tech. Dig., p574 (1988)Google Scholar
6. Sasaki, K., Fukuzawa, T. and Furukawa, S., IEDM Tech. Dig., p186 (1987)Google Scholar
7. Matsuda, A., J. Non-Cryst. Solids., 59&60, 767 (1983)Google Scholar
8. Tsai, C. C., “Advances in Amorphous Semiconductors I” ed. by Fritzsche, H., World Scientific, Singapore, 1988, p 123.Google Scholar
9 Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S., and Shimizu, I., Jpn. J. Appl. Phys., 26, L10 (1987)Google Scholar
10. Nagamine, K., Yamada, A., Konagai, K., and Takahashi, K., Jpn. J. Appl. Phys., 26, L951 (1987)CrossRefGoogle Scholar
11. Slobodin, D., Alijishi, S., Schwarz, R. and Wagner, S., Proc. Mat. Res. Soc. Symp. Proc., Vol 49, p153, Material Research Society, 1985 Google Scholar
12. Fang, C. J., Gruntz, K. J., Ley, L. and Cordona, M., J. Non-Cryst. Solid, 32, 405 (1979)Google Scholar
13. Campbell, I. H. and Fauchet, P. M., Solid State Comm., 58, 739 (1986)Google Scholar
14. Fauchet, P. M. and Campbell, I. H., CRC Crit. Rev. Solid. State Mat. Sci. 14, S79 (1988)CrossRefGoogle Scholar
15. Ephrath, L. M., J. Electrochem. Soc., 126, 1419 (1979)Google Scholar
16. Pauling, L., “The nature of the chemical bond and the structure of molecules and crystals”, Conell Univ. Press, 1960 Google Scholar