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Arsenic in SiO2 - Phase Segregation, Drift, and Diffusion Phenomena

Published online by Cambridge University Press:  22 February 2011

G. K. Celler ,
L. E. Trimble ,
T. T. Sheng ,
K. W. West ,
S. G. Kosinski  and
L. Pfeiffer
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. E. Trimble
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. T. Sheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. G. Kosinski
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have recently determined that anomalously low diffusion of high dose As implants in SiO2 is caused by phase separation. In an inert ambient, As segregates into spherical As-rich droplets of 50 to 500Å in diameter, which are essentially immobile when heated isothermally, even at 1405 °C. In a temperature gradient the droplets move toward the heat source.

The dependence of the segregation rate, drift, and diffusion on-the ambient and arsenic concentration is discussed here, and a new interpretation of the published arsenic diffusion data is provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 47
Copyright
Copyright © Materials Research Society 1988

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References

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