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Argon-surface interactions in ibad-deposited molybdenum films

Published online by Cambridge University Press:  10 February 2011

Jan van der Kuur ,
Bas Korevaar ,
Martin Pols ,
Jacqueline van der Linden  and
Barend Thijsse
Jan van der Kuur
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, Netherlands
Bas Korevaar
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, Netherlands
Martin Pols
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, Netherlands
Jacqueline van der Linden
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, Netherlands
Barend Thijsse
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, Netherlands
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Abstract

Argon incorporation and defect creation were studied experimentally. Direct desorption measurements have been used to establish the argon implantation profile. A projected range and range straggle of 0.8 and 3.5 Å were found. Argon is incorporated at substitutional positions. The creation rate of defects by argon was studied by helium desorption spectrometry. A net creation rate of (0.7 ± 0.4) × 10−3 vacancy/argon atom was found. Ion assisted deposition at elevated substrate temperatures shows that all incorporated argon acts as helium trap. Argon fluence variations show an effective cross-section for self sputtering of 31 Å2, a trapping probability of 6.5%, and a maximum achievable argon concentration of 4 × 10−3

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 57
Copyright
Copyright © Materials Research Society 1998

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References

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