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Area-Selective Laser Processing Techniques for Multichip Interconnect

Published online by Cambridge University Press:  21 February 2011

Y.S. Liu  and
H. S. Cole
Y.S. Liu
Affiliation:
GE Research and Development Center; P.O. Box 8, Schenectady, New York, 12305
H. S. Cole
Affiliation:
GE Research and Development Center; P.O. Box 8, Schenectady, New York, 12305
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Abstract

The interest in laser processing technology has increased significantly in recent years because of increasing demands for application-specific IC design and fabrication, yield enhancement, circuit restructuring, and prototyping; all of these benefit from an adaptive processing technique using direct energy for improvement of precision, resolution, process automation, and turnaround time. This paper reviews several laser-patterned metallization techniques developed for high-density multichip interconnection applications. Key material and process requirements for developing a viable laser-direct-write interconnect technique on polyimide are addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 154: Symposium K – Electronic Packaging Materials Science IV , 1989 , 11
Copyright
Copyright © Materials Research Society 1989

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References

[1] Neugebauer, C.A., Carlson, R.O., Fillion, R.A., and Haller, T.R., Solid State Tech., p. 93 (June 1988).Google Scholar
[2] Stopper, H., Tech. Dig. IEEE Int. Solid State Circuits Conf., paper FAM 18.5, pp. 268–269 (February 1965).Google Scholar
[3] Ho, C.S., Chance, D.A., Fajorik, D.H., and Acosta, R.A., IBMJ. Res. Develop. 63, 3, pp. 286–296 (May 1982).Google Scholar
[4] Jansen, R.J., Cummings, J.P., and Vora, H., IEEE Trans. Comp., Hybrids, and Manufac.Tech. CHMT-7, 4, pp. 384–393 (December 1984).Google Scholar
[5] Bartlett, C.J., Segelken, J.M., and Teneketges, N.A., IEEE Trans. Comp., Hybrids, and Manuf. Tech. CHMT-12, 4 p. 647 (1987).Google Scholar
[6] Bogatin, E., Proceedings of Nepcon/East '87, pp. 218–226 (June 1987).Google Scholar
[7] Eichelberger, C.W., Wojnarowski, R.J., Carlson, R.O., and Levinson, L M., SPIE Symposium on Innovative Science and Tech., Paper 877–15 (January 1988).Google Scholar
[8] Tuckerman, D.W., IEEE Elec. Dev. Lett. EDL-8 11, pp. 540–543 (November 1987).Google Scholar
[9] Smart, D.V. and Stewart, D.M., Lasers in Microlithography, edited by Ehrlich, D.J., Gatehelder, J.S., and Tsao, J.Y., SPIE 774, p. 88 (1988).Google Scholar
[10] Ehrlich, D.J. and Tsao, J.Y. (ed.), Laser Microfabrication and Thin Film Processing (Academic Press, to be published, 1989).Google Scholar
[11] Cole, H.S., Liu, Y.S., Guida, R., and Rose, J., SPIE 877, p. 92 (1988).Google Scholar
[12] Cole, H.S., Liu, Y.S., Philip, H.R., and Guida, R., Mat. Res. Soc. Symp. Proc. 72, p. 241 (1956).Google Scholar
[13] Notins, T.Z., Laser Focus, p. 54, (May 1987).Google Scholar
[14] Liu, Y.S., in “Tungsten and Other Refractory Metals Deposition for VLSI Applications,” edited by Blewer, R.I., Materials Research Society, p. 43 (1985).Google Scholar
[15] Cole, H.S., Liu, Y.S., Rose, J.W., Guida, R., Levinson, L M., and Philipp, H.R., Conf. Proc. for Microelectronic Applications, Honolulu, Hawaii (1987).Google Scholar
[16] Cole, H.S., Liu, Y.S., Rose, J.W., and Guida, R., Appl. Phys. Lett. 53, 2111 (1988).Google Scholar
[17] Liu, Y.S., Grubb, W.T., and Cole, H.S., in Tech Digest of Conf. on Lasers and Electro-Optics 7, WX-5, p. 286 (1988).Google Scholar
[18] Chang, C., J. Mat. Res. 2(5), p.697 (1987).Google Scholar
[19] Kim, Y., Walker, G.F., Kim, J., and Park, J., J. Adhesion Sci. Tech. 1(4), p. 331 (1987).Google Scholar
[20] Mittal, K L, J. Vac. Sci. Technol. 13, p. 19 (1976).Google Scholar
[21] Ho, P.S., Hahn, P.O., Bartha, J.W., Rubloff, G.W., LeGoues, F.K., and Silverman, B.D., J. Vac. Sci. Technol. A3, p. 739 (1985).Google Scholar
[22] Bodo, P. and Sundgren, J.E., J. Vac. Sci. Technol. A 6(4), p. 2396 (1988).Google Scholar