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Are there Charged Dangling Bonds in Device Quality Amorphous Silicon?

Published online by Cambridge University Press:  01 January 1993

M.S. Brandt ,
A. Asano  and
M. Stutzmann
M.S. Brandt
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304, USA
A. Asano
Affiliation:
Fuji Electric Corp., Yokosuka, 240-01 Japan
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
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Abstract

We discuss the possible existence of a considerable density of charged dangling bond defects in device-quality hydrogenated amorphous silicon, which for example has been postulated by recent thermal equilibrium models for the density-of-states distribution. Based on a quantitative analysis of spin resonance and light-induced spin resonance data at different temperatures as well as on subgap absorption measurements, we conclude that intrinsic a-Si:H only has a small density of charged defects caused by unintentional impurity doping. The same conclusion also holds for light-soaked a-Si:H and for samples which are dehydrogenated by annealing at high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 201
Copyright
Copyright © Materials Research Society 1993

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References

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