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Aquamarine Luminescence Band in Undoped GaN

Published online by Cambridge University Press:  01 February 2011

M. A. Reshchikov ,
L. He ,
R. J. Molnar ,
S. S. Park ,
K. Y. Lee  and
H. Morkoç
M. A. Reshchikov
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
L. He
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
R. J. Molnar
Affiliation:
MIT Lincoln Laboratory, Lexington, MA 02420, U.S.A.
S. S. Park
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea
K. Y. Lee
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea
H. Morkoç
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
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Abstract

We report a new defect-related photoluminescence (PL) band peaking at 2.56 eV at 15 K in undoped GaN layers grown by molecular beam epitaxy (MBE) on GaN templates. The maximum of the aquamarine luminescence (AL) band shifts to higher energies by about 100 meV with increasing temperature from 15 to 300 K. In spite of the fact that the shape and the peak position of the AL band are close to the characteristics of the green luminescence band in a freestanding GaN template, we were able to delineate these two bands for their markedly different behavior with temperature and excitation intensity. The origin of defect responsible for this PL band remains unknown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E9.8
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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