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Applications of Beam-Solid Interactions in Semiconductor Material and Device Processing

Published online by Cambridge University Press:  25 February 2011

John C. C. Fan*
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
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Abstract

Pulsed or scanned energy beams have been shown to be very useful for many semiconductor applications, ranging from annealing of ion-implanted damage to preparation of materials. An overview of this important field is given and its prospects assessed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Laff, R. A. and Hutchins, G. L., IEEE Trans. Electron Devices ED–21, 743 (1974).Google Scholar
2. Fan, J. C. C. and Zeiger, H. J., Appl. Phys. Lett. 27, 224 (1975).Google Scholar
3. Fan, J. C. C., Zeiger, H. J., and Zavracky, P. M., in Proc. National Workshop on Low Cost Polycrystalline Silicon Solar Cells, Dallas, TX, 1976, Eds. Chu, T. L. and Chu, S. S. (Southern Methodist University, Dallas, TX, 1976) p. 89.Google Scholar
4. Fan, J. C. C. and Zeiger, H. J., US Patent No. 4,059,461 (1977).Google Scholar
5. Narayan, J., White, C. W., and Holland, O. W., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 179.Google Scholar
6. Hill, C., in Laser-Solid Interactions and Transient Thermal Processing of Materials, Eds. Narayan, J., Brown, W. L., and Lemons, R. A. (Elsevier North Holland, New York, 1983), p. 381.Google Scholar
7. Aziz, M. J., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 369.Google Scholar
8. Gibbons, J. F., Dobkin, D. M., Greiner, M. E., Hoyt, J. L., and Opyd, W. G., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 37.Google Scholar
9. Tsaur, B-Y., Donnelly, J. P., Fan, J. C. C., and Geis, M. W., Appl. Phys. Lett. 39, 93 (1981).Google Scholar
10. , J. Narayan, in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 335.Google Scholar
11. Sedgwick, T. O., Kalish, R., Mader, S. R., and Shatas, S. C., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 293.Google Scholar
12. Kuzuhara, M., Kohzu, H., and Takayama, Y., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 651.Google Scholar
13. Biegelsen, D. K., Johnson, N. M., Hawkins, W. G., Fennell, L. E., and Moyer, M. D., in Laser-Solid Interactions and Transient Thermal Porcessing of Materials,Eds. Narayan, J., Brown, W. L., and Lemons, R. A. (Elsevier North Holland, New York, 1983), p. 537.Google Scholar
14. Lam, H. W., Pinizzotto, R. F., and Tasch, A. F., Jr., J. Electrochem. Soc. 128, 1981 (1981).Google Scholar
15. Fan, J. C. C., J. Cryst. Growth 63, 453 (1983).Google Scholar
16. Kamgar, A., Rozgonyi, G. A., and Knoell, R., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 569.Google Scholar
17. Chen, C. K., Geis, M. W., Choi, H. K., Tsaur, B-Y., and Fan, J. C. C., presented in this symposium.Google Scholar
18. Fan, J. C. C. in Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, August 1984, Kobe, Japan, p. 115.Google Scholar
19. Izumi, K., , M. Doken and Ariyoshi, H., Electron. Lett. 14, 593 (1978).Google Scholar
20. Lam, H. W. and Pinizzotto, R. F., J. Cryst. Growth 63, 554 (1983).Google Scholar
21. Dexter, R. J., Watelski, S. B., and Picraux, S. T., Appl. Phys. Lett. 23, 455 (1973).Google Scholar
22. Chen, C. E., T. Blake, G. W., Hite, L. R., Malhi, S. D. S., Mao, B. Y., and Lam, H. W., IEEE SOS/SOI Technology Workshop, Hilton Head Island, South Carolina, October 1984.Google Scholar
23. Izumi, K., Omura, Y., and Nakashima, S., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 443.Google Scholar
24. Yamamoto, H., Ishiwara, H., and Furukawa, S., in Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices arid Materials, August 1984, Kobe, Japan, p. 507.Google Scholar
25. Laude, L. D., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 611.Google Scholar
26. Tung, R. T., Gibson, J. M., Jacobson, D. C., and Poate, J. M., in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 721.Google Scholar
27. Fan, J. C. C., Tsaur, B-Y, and Foley, G. H., unpublished.Google Scholar
28. Galvin, G. J., Hung, L. S., Mayer, J. W., and Nastasi, M. in Energy Beam-Solid Interactions and Transient Thermal Processing, Eds. Fan, J. C. C. and Johnson, N. M. (Elsevier North Holland, New York, 1984), p. 25.Google Scholar
29. Tsaur, B-Y., Chen, C. K., Anderson, C. H., Jr., , and Kwong, D. L., J. Appl. Phys. (to be published).Google Scholar