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Application of The Silicon Interstitial Based Intrinsic Gettering Process to the Formation of Multilevel Defect Structures

Published online by Cambridge University Press:  28 February 2011

K. Nauka
K. Nauka*
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
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Abstract

The new intrinsic gettering mechanism based on the interactions of silicon interstitialshas been studied in float zone silicon with virtually zero oxygen content. Silicon wafers were subjected to the high-low-medium temperature annealing cycle, with the high temperature step carried out subsequently in an inert ambient, followed by the dry 02, followed by an inert ambient. The annealing caused formation of a multilevel structure consisting of two defect free regions with a high lifetime value, separated by a layer with high defect density and a low lifetime value. The experimental data corresponds to the theoretical calculations describing silicon interstitial injection during dry 02 oxidation and their diffusion during annealing in an inert ambient.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 27
Copyright
Copyright © Materials Research Society 1986

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References

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