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The Application of Laser Annealing to the Fabrication of Impatt Diode Structures

Published online by Cambridge University Press:  25 February 2011

Anthony E Adams  and
L A Hing
Anthony E Adams
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, MiddlesexUK
L A Hing
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, MiddlesexUK
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Abstract

The conventional method for fabricating silicon IMPATT diode structures involves the epitaxial growth of successive n- and p-type layers onto a n+ substrate followed by a boron diffusion to form the final p+ layer. The high temperature time cycles experienced by the structure during these processes cause junction interfaces to become degraded through dopant diffusion. In this paper we examine the application of laser processing techniques to the epitaxial regrowth of low temperature deposited layers and report on the nature of the recrystallised material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 497
Copyright
Copyright © Materials Research Society 1985

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References

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